Recent Advancements in Semiconductor Switches

Webinar details

Recent advancements in semiconductor switches have revolutionized power electronics by improving efficiency, reliability, and performance in high-power and high-frequency applications. Innovations in wide-bandgap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN) have enabled switches with higher breakdown voltages, lower conduction losses, and faster switching speeds compared to traditional silicon-based devices. These advancements are driving the development of next-generation power converters, electric vehicles, renewable energy systems, and telecommunications infrastructure. Key areas of progress include enhanced fabrication techniques, novel device architectures, and the integration of these switches into compact, high-performance systems.

Key takeaways from this webinar

• Advancements in Wide-Bandgap Materials: Explore how Silicon Carbide (SiC) and Gallium Nitride (GaN) are revolutionizing semiconductor switches with higher efficiency, faster switching, and better thermal performance.
• Breakthroughs in Device Design and Fabrication: Understand the latest innovations in semiconductor switch architectures and manufacturing techniques that enhance performance and reliability.
• Real-World Applications and Emerging Trends: Gain insights into how these advancements are transforming industries such as renewable energy, electric vehicles, and telecommunications, and learn about the future directions in semiconductor technology.

Related courses

This webinar/topic is multidisciplinary and covers the Electrical engineering and Electronic Engineering school and is particularly found in the following courses:

• Professional Certificate of Competency in Circuit Breakers, Switchgear and Power Transformers
• Professional Certificate of Competency in Power Distribution
• Professional Certificate of Competency in Electrical Power System Protection
• Undergraduate Certificate in Electrical and Electronics Engineering
• UET60222 Advanced Diploma of ESI – Power Systems (Australia & New Zealand Only)
• 52914WA Graduate Certificate in Mechatronics
• Graduate Certificate in Power System Analysis and Design

To learn more about tuition fees, please click here.

About the presenter

Dr. Hamid Amini Moghadam, EIT Lecturer

Dr. Hamid Amini Moghadam is an accomplished academic and researcher with extensive expertise in the physics and fabrication of power semiconductor devices, specializing in Silicon Carbide (SiC) and High Electron Mobility Transistors (HEMTs). His research focuses on the fabrication and analysis of power semiconductor devices, aiming to drive innovation and enhance performance in modern electronic systems.

With a strong background in academia, Dr. Amini Moghadam has significant experience teaching a wide range of electrical and electronic engineering courses, where he combines theoretical depth with practical insights to inspire and empower his students.

His contributions to the field of power semiconductors and his dedication to education position him as a leader in advancing both the research and application of cutting-edge technologies in electrical and electronic engineering.